irli3705n hexfet ? power mosfet pd - 9.1369b s d g v dss = 55v r ds(on) = 0.01 i d = 52a l logic-level gate drive l advanced process technology l isolated package l high voltage isolation = 2.5kvrms ? l sink to lead creepage dist. = 4.8mm l fully avalanche rated to-220 fullpak fifth generation hexfets from international rectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. the moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. this isolation is equivalent to using a 100 micron mica barrier with standard to-220 product. the fullpak is mounted to a heatsink using a single clip or by a single screw fixing. 8/25/97 description parameter typ. max. units r jc junction-to-case CCC 2.6 r ja junction-to-ambient CCC 65 thermal resistance parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 52 i d @ t c = 100c continuous drain current, v gs @ 10v 37 a i dm pulsed drain current ?? 310 p d @t c = 25c power dissipation 58 w linear derating factor 0.39 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy ?? 340 mj i ar avalanche current ?? 46 a e ar repetitive avalanche energy ? 5.8 mj dv/dt peak diode recovery dv/dt ?? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings c/w downloaded from: http:///
irli3705n parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.056 CCC v/c reference to 25c, i d = 1ma ? CCC CCC 0.010 v gs = 10v, i d = 28a ? CCC CCC 0.012 v gs = 5.0v, i d = 28a ? CCC CCC 0.018 v gs = 4.0v, i d = 24a ? v gs(th) gate threshold voltage 1.0 CCC 2.0 v v ds = v gs , i d = 250a g fs forward transconductance 50 CCC CCC s v ds = 25v, i d = 46a ? CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 16v gate-to-source reverse leakage CCC CCC -100 v gs = -16v q g total gate charge CCC CCC 98 i d = 46a q gs gate-to-source charge CCC CCC 19 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 49 v gs = 5.0v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 12 CCC v dd = 28v t r rise time CCC 140 CCC ns i d = 46a t d(off) turn-off delay time CCC 37 CCC r g = 1.8 , v gs = 5.0v t f fall time CCC 78 CCC r d = 0.59 , see fig. 10 ?? between lead,6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 3600 CCC v gs = 0v c oss output capacitance CCC 870 CCC v ds = 25v c rss reverse transfer capacitance CCC 320 CCC ? = 1.0mhz, see fig. 5 ? c drain to sink capacitance CCC 12 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current l d internal drain inductance CCC 4.5 CCC l s internal source inductance CCC 7.5 CCC r ds(on) static drain-to-source on-resistance nh pf s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ?? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 28a, v gs = 0v ? t rr reverse recovery time CCC 94 140 ns t j = 25c, i f = 46a q rr reverse recoverycharge CCC 290 440 nc di/dt = 100a/s ?? s d g a 52 310 source-drain ratings and characteristics ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? v dd = 25v, starting t j = 25c, l = 320h r g = 25 , i as = 46a. (see figure 12) notes: ? pulse width 300s; duty cycle 2%. ? uses irl3705n data and test conditions ? i sd 46a, di/dt 250a/s, v dd v (br)dss , t j 175c ? t=60s, ?=60hz downloaded from: http:///
irli3705n fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 25c j vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bott om 2.5v 2.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-so urce current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 175c vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bott om 2.5v 2.5v j 1 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 t = 25c j gs v , g ate -to-source voltage (v) d i , d rain -to-sou rce curren t (a) t = 175c j a v = 2 5v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain -to -s ource o n re sistan ce ds(on) (norm alized) v = 10 v gs a i = 77 a d downloaded from: http:///
irli3705n fig 6. typical gate charge vs. gate-to-source voltage fig 8. maximum safe operating area fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 1000 2000 3000 4000 5000 6000 1 10 100 c, capacitance (pf) ds v , d rain-to-source voltage (v) a v = 0v , f = 1 mhz c = c + c , c sho rted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c is s c oss c rs s 0 3 6 9 12 15 0 20 40 60 80 100 120 140 q , total gate charge (nc) g v , g ate-to -sou rce v oltage (v ) gs a for test circuit see figure 13 i = 46 a v = 44 v v = 28 v d dsds 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 2.8 t = 25c j v = 0 v gs v , source-to-drain voltage (v) i , reverse drain cu rren t (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a ) ope ratio n in this a re a limite d by r d ds(on) 10s 100s 1ms 10ms a t = 25 c t = 17 5c single pulse cj downloaded from: http:///
irli3705n fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 5.0v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
irli3705n q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 5.0 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current 0 200 400 600 800 25 50 75 100 125 150 175 j e , s ingle pulse avalanche e nergy (m j) as a starting t , junction temperature (c) v = 2 5v i to p 1 9a 33a bottom 46a dd d fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15 v 20v downloaded from: http:///
irli3705n p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer ? * downloaded from: http:///
irli3705n part number international rectifier lo go example : this is an irf1010 w ith assembly lo t co de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a part marking informationto-220 fullpak package outlineto-220 fullpak outline dimensions are shown in millimeters (inches) l ea d as sign ments 1 - ga t e 2 - d r ain 3 - source no t es : 1 dimension ing & toler ancing pe r a nsi y1 4.5m, 1982 2 controlling dimen sion: inch. d c a b minimum creepage distance betw een a -b -c-d = 4.80 (.189 ) 3x 2.85 (.1 12) 2.65 (.1 04) 2.80 (.110) 2.60 (.102) 4.80 (.189 ) 4.60 (.181 ) 7.10 (.280 ) 6.70 (.263 ) 3 .40 (.1 33) 3 .10 (.1 23) ? - a - 3.7 0 (.145) 3.2 0 (.126) 1.15 (.045) m in . 3.30 (.130) 3.10 (.122) - b - 0.90 (.035 ) 0.70 (.028 ) 3x 0.25 (.010) m a m b 2 .5 4 (.100) 2x 3x 13 .7 0 (.540) 13 .5 0 (.530) 16 .0 0 (.630) 15 .8 0 (.622) 1 2 3 10.60 (.417 ) 10.40 (.409 ) 1.40 (.05 5) 1.05 (.04 2) 0.48 (.019 ) 0.44 (.017 ) part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code e401 9245 irfi840g example : this is an irfi840g w ith assembly lot code e401 a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 8/97 downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///
|
